Invention Grant
US08946017B2 Method of making a TFT charge storage memory cell having high-mobility corrugated channel
有权
制造具有高迁移率波纹通道的TFT电荷存储存储单元的方法
- Patent Title: Method of making a TFT charge storage memory cell having high-mobility corrugated channel
- Patent Title (中): 制造具有高迁移率波纹通道的TFT电荷存储存储单元的方法
-
Application No.: US13351456Application Date: 2012-01-17
-
Publication No.: US08946017B2Publication Date: 2015-02-03
- Inventor: Roy E. Scheuerlein
- Applicant: Roy E. Scheuerlein
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L29/423 ; B82Y10/00 ; H01L21/84 ; H01L27/115 ; H01L27/12 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; G11C16/04 ; H01L27/06 ; H01L29/06 ; H01L29/10 ; H01L29/786
Abstract:
Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is non-planar in shape.
Public/Granted literature
- US20120115289A1 TFT CHARGE STORAGE MEMORY CELL HAVING HIGH-MOBILITY CORRUGATED CHANNEL Public/Granted day:2012-05-10
Information query
IPC分类:
