Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost

Invention Grant

US08946035B2 Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost 有权

Title translation: 用于半导体器件的替换通道及其使用掺杂剂浓度增强的方法

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Patent Title: Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost
Patent Title (中): 用于半导体器件的替换通道及其使用掺杂剂浓度增强的方法
Application No.: US13628359

Application Date: 2012-09-27
Publication No.: US08946035B2

Publication Date: 2015-02-03
Inventor: Yu-Lien Huang , Ming-Huan Tsai , Clement Hsingjen Wann
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Duane Morris LLP
Main IPC: H01L21/425
IPC: H01L21/425 ; H01L29/66 ; H01L29/78

Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost

Abstract:

A replacement channel and a method for forming the same in a semiconductor device are provided. A channel area is defined in a substrate which is a surface of a semiconductor wafer or a structure such as a fin formed over the wafer. Portions of the channel region are removed and are replaced with a replacement channel material formed by an epitaxial growth/deposition process to include a first dopant concentration level less than a first dopant concentration level. A subsequent doping operation or operations is then used to boost the average dopant concentration to a level greater than the first dopant concentration level. The replacement channel material is formed to include a gradient in which the upper portion of the replacement channel material has a greater dopant concentration than the lower portion of replacement channel material.

Abstract(Chinese):

提供了一种替代通道及其在半导体器件中的形成方法。沟道区域被限定在衬底中，该衬底是半导体晶片的表面或在晶片上形成的诸如鳍片的结构。沟道区域的部分被去除，并被用外延生长/沉积工艺形成的替代沟道材料代替以包括小于第一掺杂剂浓度水平的第一掺杂剂浓度水平。然后使用随后的掺杂操作或操作来将平均掺杂剂浓度升高到大于第一掺杂剂浓度水平的水平。替换通道材料形成为包括其中更换通道材料的上部具有比替换通道材料的下部更大的掺杂剂浓度的梯度。

Public/Granted literature

US20140084351A1 REPLACEMENT CHANNELS FOR SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME USING DOPANT CONCENTRATION BOOST Public/Granted day:2014-03-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/42	....用辐射轰击的
H01L21/423	.....带有高能辐射的
H01L21/425	......产生离子注入的