Methods for producing a tunnel field-effect transistor

Invention Grant

US08946037B2 Methods for producing a tunnel field-effect transistor 有权

Title translation: 隧道场效应晶体管的制造方法

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Patent Title: Methods for producing a tunnel field-effect transistor
Patent Title (中): 隧道场效应晶体管的制造方法
Application No.: US13957277

Application Date: 2013-08-01
Publication No.: US08946037B2

Publication Date: 2015-02-03
Inventor: Ronald Kakoschke , Helmut Tews
Applicant: Infineon Technologies AG
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Slater & Matsil, L.L.P.
Priority: DE102005002739 20050120
Main IPC: H01L21/336
IPC: H01L21/336 ; H01L29/66 ; H01L29/73 ; H01L21/28 ; H01L21/8234 ; H01L27/088 ; H01L29/78

Methods for producing a tunnel field-effect transistor

Abstract:

A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.

Abstract(Chinese):

公开了一种用于制造隧道场效应晶体管的方法。通过自对准注入方法产生不同掺杂类型的连接区域。

Public/Granted literature

US20140024193A1 Methods for Producing a Tunnel Field-Effect Transistor Public/Granted day:2014-01-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的