Invention Grant
US08946045B2 Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)
有权
具有深沟槽（DT）结构的金属绝缘体金属（MIM）电容器和绝缘体上硅（SOI）
- Patent Title: Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)
- Patent Title (中): 具有深沟槽（DT）结构的金属绝缘体金属（MIM）电容器和绝缘体上硅（SOI）
-
Application No.: US13457601Application Date: 2012-04-27
-
Publication No.: US08946045B2Publication Date: 2015-02-03
- Inventor: John E. Barth, Jr. , Herbert L. Ho , Babar A. Khan , Kirk D. Peterson
- Applicant: John E. Barth, Jr. , Herbert L. Ho , Babar A. Khan , Kirk D. Peterson
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Michael J. LeStrange, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8242 ; H01L29/02
Abstract:
A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact with the metal layer, which comprises a first node of a capacitor. A dielectric material lines the metal material in the trench. The trench is filled with a conductor. The dielectric material that lines the metal material separates the conductor from the metal layer and the metal material lining the trench. The conductor comprises a second node of the capacitor.
Public/Granted literature
Information query
IPC分类:
