Invention Grant
- Patent Title: Method for fabricating capacitor
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Application No.: US12794412Application Date: 2010-06-04
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Publication No.: US08946047B2Publication Date: 2015-02-03
- Inventor: Jin-Hyock Kim , Seung-Jin Yeom , Ki-Seon Park , Han-Sang Song , Deok-Sin Kil , Jae-Sung Roh
- Applicant: Jin-Hyock Kim , Seung-Jin Yeom , Ki-Seon Park , Han-Sang Song , Deok-Sin Kil , Jae-Sung Roh
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2005-0104846 20051103
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L49/02 ; H01L27/108 ; H01L21/8239

Abstract:
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.
Public/Granted literature
- US20100240188A1 METHOD FOR FABRICATING CAPACITOR Public/Granted day:2010-09-23
Information query
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