Invention Grant
US08946055B2 Laser processing method for cutting substrate and laminate part bonded to the substrate
有权
用于切割基板的激光加工方法和结合到基板的层压部件
- Patent Title: Laser processing method for cutting substrate and laminate part bonded to the substrate
- Patent Title (中): 用于切割基板的激光加工方法和结合到基板的层压部件
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Application No.: US10594907Application Date: 2005-03-25
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Publication No.: US08946055B2Publication Date: 2015-02-03
- Inventor: Takeshi Sakamoto , Kenshi Fukumitsu
- Applicant: Takeshi Sakamoto , Kenshi Fukumitsu
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2004-100933 20040330
- International Application: PCT/JP2005/005554 WO 20050325
- International Announcement: WO2005/098916 WO 20051020
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B28D5/00 ; B23K26/00 ; B23K26/40 ; H01L29/06

Abstract:
A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision.This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4, so as to form modified regions 71, 72, 73 within the substrate 4. Here, the HC modified region 73 is formed at a position between the segmented modified region 72 closest to the rear face 21 and the rear face 21, so as to generate a fracture 24 extending along a line to cut from the HC modified region 73 to the rear face 21. Therefore, when an expandable tape is bonded to the rear face 21 of the substrate 4 and expanded, fractures smoothly advance from the substrate 4 to a laminate part 16 by way of the segmented modified regions 72, whereby the substrate 4 and laminate part 16 can be cut along the line to cut with a high precision.
Public/Granted literature
- US20090166808A1 LASER PROCESSING METHOD AND SEMICONDUCTOR CHIP Public/Granted day:2009-07-02
Information query
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