Invention Grant
- Patent Title: Method and apparatus for plasma dicing a semi-conductor wafer
- Patent Title (中): 用于等离子体切割半导体晶片的方法和装置
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Application No.: US13767459Application Date: 2013-02-14
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Publication No.: US08946058B2Publication Date: 2015-02-03
- Inventor: Rich Gauldin , Chris Johnson , David Johnson , Linnell Martinez , David Pays-Volard , Russell Westerman , Gordon M. Grivna
- Applicant: Plasma-Therm LLC
- Applicant Address: US FL St. Petersburg
- Assignee: Plasma-Therm LLC
- Current Assignee: Plasma-Therm LLC
- Current Assignee Address: US FL St. Petersburg
- Agency: Burr & Forman LLP
- Agent Harvey S. Kauget
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/302 ; H01L21/461 ; H01L21/78 ; H01J37/32 ; H01L21/67 ; H01L21/683 ; H01L21/687 ; H01L21/3065
Abstract:
The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.
Public/Granted literature
- US20130230973A1 Method and Apparatus for Plasma Dicing a Semi-conductor Wafer Public/Granted day:2013-09-05
Information query
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