Invention Grant
- Patent Title: Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
- Patent Title (中): 用于光伏器件等的多晶硅厚膜及其制造方法
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Application No.: US13682786Application Date: 2012-11-21
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Publication No.: US08946062B2Publication Date: 2015-02-03
- Inventor: Vijayen S. Veerasamy , Martin D. Bracamonte
- Applicant: Guardian Industries Corp.
- Applicant Address: US MI Auburn Hills
- Assignee: Guardian Industries Corp.
- Current Assignee: Guardian Industries Corp.
- Current Assignee Address: US MI Auburn Hills
- Agency: Nixon & Vanderhye P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/04 ; C23C16/02 ; C30B25/18 ; C30B29/06 ; H01L31/0368 ; H01L31/18 ; C23C16/24 ; C23C16/44
Abstract:
A method of manufacturing a polycrystalline silicon film includes: depositing a catalyst layer including nickel and depositing nickel nanoparticles on a substrate; exposing the catalyst layer and the nanoparticles to at least silane gas; and heat treating the substrate coated with the catalyst layer and the nanoparticles during at least part of the exposing to silane gas in growing a silicon based film on the substrate.
Public/Granted literature
- US20140138696A1 POLYCRYSTALLINE SILICON THICK FILMS FOR PHOTOVOLTAIC DEVICES OR THE LIKE, AND METHODS OF MAKING SAME Public/Granted day:2014-05-22
Information query
IPC分类:
