Invention Grant
- Patent Title: Semiconductor device having SSOI substrate with relaxed tensile stress
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Application No.: US13690240Application Date: 2012-11-30
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Publication No.: US08946063B2Publication Date: 2015-02-03
- Inventor: Veeraraghavan S. Basker , Ali Khakifirooz , Pranita Kerber , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/78
Abstract:
A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.
Public/Granted literature
- US20140151802A1 Semiconductor Device Having SSOI Substrate Public/Granted day:2014-06-05
Information query
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