Some embodiments include methods of forming vertically-stacked memory cells. An opening is formed to extend partially through a stack of alternating electrically insulative levels and electrically conductive levels. A liner is formed along sidewalls of the opening, and then the stack is etched to extend the opening. The liner is at least partially consumed during the etch and forms passivation material. Three zones occur during the etch, with one of the zones being an upper zone of the opening protected by the liner, another of the zones being an intermediate zone of the opening protected by passivation material but not the liner, and another of the zones being a lower zone of the opening which is not protected by either passivation material or the liner. Cavities are formed to extend into the electrically conductive levels along sidewalls of the opening. Charge blocking dielectric and charge-storage structures are formed within the cavities.