Invention Grant
- Patent Title: Method for etching a layer on a silicon semiconductor substrate
- Patent Title (中): 蚀刻硅半导体衬底上的层的方法
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Application No.: US12452692Application Date: 2008-07-02
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Publication No.: US08946090B2Publication Date: 2015-02-03
- Inventor: Volker Becker , Franz Laermer , Tino Fuchs , Christina Leinenbach
- Applicant: Volker Becker , Franz Laermer , Tino Fuchs , Christina Leinenbach
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE102007033685 20070719
- International Application: PCT/EP2008/058539 WO 20080702
- International Announcement: WO2009/010391 WO 20090122
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3065 ; H01L21/306 ; H01L21/02 ; B81C1/00 ; H01L21/3213
Abstract:
A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.
Public/Granted literature
- US20100203739A1 METHOD FOR ETCHING A LAYER ON A SILICON SEMICONDUCTOR SUBSTRATE Public/Granted day:2010-08-12
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