Invention Grant
- Patent Title: Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
- Patent Title (中): 半导体装置的制造方法，基板的处理方法及基板处理装置
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Application No.: US14036568Application Date: 2013-09-25
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Publication No.: US08946092B2Publication Date: 2015-02-03
- Inventor: Yoshiro Hirose , Yushin Takasawa , Tsukasa Kamakura , Yoshinobu Nakamura , Ryota Sasajima
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-091327 20100412; JP2010-280421 20101216
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/30 ; C23C16/455 ; H01L21/67
Abstract:
An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate.
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