Invention Grant
- Patent Title: Semiconductor image sensor module and method of manufacturing the same
- Patent Title (中): 半导体图像传感器模块及其制造方法
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Application No.: US11915958Application Date: 2006-06-01
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Publication No.: US08946610B2Publication Date: 2015-02-03
- Inventor: Shin Iwabuchi , Makoto Motoyoshi
- Applicant: Shin Iwabuchi , Makoto Motoyoshi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2005-163267 20050602; JP2005-197730 20050706
- International Application: PCT/JP2006/311007 WO 20060601
- International Announcement: WO2006/129762 WO 20061207
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H01L31/101 ; H01L31/18 ; H04N5/374 ; H04N5/378 ; H01L23/48 ; H01L27/115 ; H01L29/788 ; H01L29/792

Abstract:
The present invention provides a CMOS type semiconductor image sensor module in which the aperture ratio of the pixel is improved and at the same time chip use efficiency is attempted to be improved and furthermore, simultaneous shuttering of all the pixels is made possible, and a method of manufacturing the same. The semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip including an image sensor in which a plurality of pixels, each constituted by a photoelectric conversion element and transistors, are arranged, and a second semiconductor chip including an A/D converter array. Preferably, a third semiconductor chip including a memory element array is further laminated. Also, a semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip provided with the aforesaid image sensor and a fourth semiconductor chip provided with an analog type nonvolatile memory array.
Public/Granted literature
- US20100276572A1 SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-11-04
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