Invention Grant
US08946672B2 Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
有权
能够在低电压下工作的电阻变化元件，半导体器件以及用于形成电阻变化元件的方法
- Patent Title: Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
- Patent Title (中): 能够在低电压下工作的电阻变化元件，半导体器件以及用于形成电阻变化元件的方法
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Application No.: US13508243Application Date: 2010-11-08
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Publication No.: US08946672B2Publication Date: 2015-02-03
- Inventor: Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
- Applicant: Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2009-258007 20091111
- International Application: PCT/JP2010/069836 WO 20101108
- International Announcement: WO2011/058947 WO 20110519
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00
Abstract:
A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
Public/Granted literature
- US20120280200A1 RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT Public/Granted day:2012-11-08
Information query
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