Invention Grant
US08946674B2 Group III-nitrides on Si substrates using a nanostructured interlayer
有权
使用纳米结构中间层的Si衬底上的III族氮化物
- Patent Title: Group III-nitrides on Si substrates using a nanostructured interlayer
- Patent Title (中): 使用纳米结构中间层的Si衬底上的III族氮化物
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Application No.: US11512615Application Date: 2006-08-29
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Publication No.: US08946674B2Publication Date: 2015-02-03
- Inventor: Olga Kryliouk , Hyun Jong Park , Timothy J. Anderson
- Applicant: Olga Kryliouk , Hyun Jong Park , Timothy J. Anderson
- Applicant Address: US FL Gainesville
- Assignee: University of Florida Research Foundation, Inc.
- Current Assignee: University of Florida Research Foundation, Inc.
- Current Assignee Address: US FL Gainesville
- Agency: Cantor Colburn LLP
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/02
Abstract:
A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured InxGa1-xN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.
Public/Granted literature
- US20070108466A1 Group III-nitrides on Si substrates using a nanostructured interlayer Public/Granted day:2007-05-17
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