Invention Grant
- Patent Title: Vertical tunneling negative differential resistance devices
- Patent Title (中): 垂直隧道负差动电阻装置
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Application No.: US13972050Application Date: 2013-08-21
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Publication No.: US08946679B2Publication Date: 2015-02-03
- Inventor: Ravi Pillarisetty
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/417 ; H01L29/778 ; H01L21/335 ; H01L29/772 ; H01L29/10 ; H01L29/66 ; H01L29/739 ; H01L29/205
Abstract:
The present disclosure relates to the fabrication of microelectronic devices having at least one negative differential resistance device formed therein. In at least one embodiment, the negative differential resistance devices may be formed utilizing quantum wells. Embodiments of negative differential resistance devices of present description may achieve high peak drive current to enable high performance and a high peak-to-valley current ratio to enable low power dissipation and noise margins, which allows for their use in logic and/or memory integrated circuitry.
Public/Granted literature
- US20140014903A1 VERTICAL TUNNELING NEGATIVE DIFFERENTIAL RESISTANCE DEVICES Public/Granted day:2014-01-16
Information query
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