Invention Grant
- Patent Title: TFET with nanowire source
- Patent Title (中): 具有纳米线源的TFET
-
Application No.: US13571657Application Date: 2012-08-10
-
Publication No.: US08946680B2Publication Date: 2015-02-03
- Inventor: Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
- Applicant: Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L29/06 ; B82Y10/00 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786 ; H01L29/739 ; H01L29/78 ; H01L29/40
Abstract:
A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.
Public/Granted literature
- US20140239258A1 TFET with Nanowire Source Public/Granted day:2014-08-28
Information query
IPC分类:
