Invention Grant
- Patent Title: Graphene (multilayer) boron nitride heteroepitaxy for electronic device applications
- Patent Title (中): 石墨烯（多层）氮化硼异质外延电子器件应用
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Application No.: US13678827Application Date: 2012-11-16
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Publication No.: US08946692B2Publication Date: 2015-02-03
- Inventor: Jeffry A Kelber
- Applicant: University of North Texas
- Applicant Address: US TX Denton
- Assignee: University of North Texas
- Current Assignee: University of North Texas
- Current Assignee Address: US TX Denton
- Agent Steven B. Kelber
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/15 ; H01L31/0256 ; H01L29/08 ; H01L35/24 ; H01L51/00 ; B32B9/04 ; B82Y30/00 ; B82Y40/00 ; C01B31/04 ; C23C16/26 ; C23C16/34 ; H01L21/02 ; H01L21/8238 ; H01L23/532
Abstract:
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.
Public/Granted literature
- US20130302562A1 GRAPHENE (MULTILAYER) BORON NIRIDE HETEROEPTAXY FOR ELECTRONIC DEVICE APPLICATIONS Public/Granted day:2013-11-14
Information query
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