Invention Grant
- Patent Title: Thin film transistor, array substrate and display device
- Patent Title (中): 薄膜晶体管,阵列基板和显示装置
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Application No.: US13703551Application Date: 2012-10-25
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Publication No.: US08946701B2Publication Date: 2015-02-03
- Inventor: Zhanfeng Cao , Xiaoyang Tong , Qi Yao , Seongyeol Yoo
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201120575315U 20111231
- International Application: PCT/CN2012/083500 WO 20121025
- International Announcement: WO2013/097529 WO 20130704
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/786 ; H01L29/06 ; H01L29/51

Abstract:
Embodiments of the present invention provide a thin film transistor, an array substrate and a display device. The thin film transistor comprises a gate layer, a first insulating layer, an active layer, an etch stop layer and a source/drain electrode layer, wherein the active layer is made of a metal oxide material, the first insulating layer, the active layer, the etch stop layer and the source/drain electrode layer are sequentially stacked from bottom to top, the source/drain electrode layer contains an interval separating a source electrode and a drain electrode therein, the etch stop layer is located below the interval, and the etch stop layer has a width greater than that of the interval, and the first insulating layer comprises a laminate of a first sub-insulation layer and a second sub-insulation layer, the second sub-insulation layer is in contact with the active layer and made of an oxygen-rich insulating material.
Public/Granted literature
- US20140084282A1 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2014-03-27
Information query
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