Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13173392Application Date: 2011-06-30
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Publication No.: US08946728B2Publication Date: 2015-02-03
- Inventor: Kyu Sang Kim
- Applicant: Kyu Sang Kim
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2010-0107742 20101101
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/50 ; H01L33/08 ; H01L33/20

Abstract:
A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.
Public/Granted literature
- US20120104439A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2012-05-03
Information query
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