Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13912476Application Date: 2013-06-07
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Publication No.: US08946729B2Publication Date: 2015-02-03
- Inventor: Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
- Applicant: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN2010101921566 20100604
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/02 ; H01L33/20

Abstract:
A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The second semiconductor layer is covered with stepped three-dimensional nano-structures in a particular shape, which act to reabsorb wide-angle incident light and re-emit the light at narrower angles of incidence, to increase the light-giving properties of the light emitting diode.
Public/Granted literature
- US20130270603A1 LIGHT EMITTING DIODE Public/Granted day:2013-10-17
Information query
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