Invention Grant
- Patent Title: Optoelectronic device and method for manufacturing the same
- Patent Title (中): 光电子器件及其制造方法
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Application No.: US13731919Application Date: 2012-12-31
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Publication No.: US08946736B2Publication Date: 2015-02-03
- Inventor: Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW99137445A 20101029; TW100102057A 20110119
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/00 ; H01L33/10 ; H01L51/52 ; H01L33/12 ; H01L31/052
Abstract:
An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
Public/Granted literature
- US20130134457A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-05-30
Information query
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