Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US12974605Application Date: 2010-12-21
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Publication No.: US08946744B2Publication Date: 2015-02-03
- Inventor: Yeo Jin Yoon , Won Cheol Seo
- Applicant: Yeo Jin Yoon , Won Cheol Seo
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2009-0131693 20091228
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.
Public/Granted literature
- US20110156070A1 LIGHT EMITTING DIODE Public/Granted day:2011-06-30
Information query
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