Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13682224Application Date: 2012-11-20
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Publication No.: US08946749B2Publication Date: 2015-02-03
- Inventor: Katsuji Iguchi
- Applicant: Katsuji Iguchi
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Morrison & Foerster LLP
- Priority: JP2011-254128 20111121
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/58

Abstract:
A semiconductor light emitting device includes a substrate having a wiring pattern formed thereon, and a semiconductor light emitting element mounted on one main surface of the substrate and electrically connected to the wiring pattern. The substrate has, on the one main surface, a serrated structure reflecting at least part of light emitted from said semiconductor light emitting element to the substrate, to a direction perpendicular to the one main surface.
Public/Granted literature
- US20130126927A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-05-23
Information query
IPC分类: