Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13833170Application Date: 2013-03-15
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Publication No.: US08946750B2Publication Date: 2015-02-03
- Inventor: Kazuhito Higuchi , Hideo Shiozawa , Takayoshi Fujii , Akihiro Kojima , Susumu Obata , Toshiyuki Terada
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-080257 20120330
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/44 ; H01L33/50 ; H01L33/46

Abstract:
A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, a translucent layer, and a wavelength conversion layer. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The first semiconductor layer has a first and second major surface. The first major surface has a first and second portion. The second major surface is opposed the first major surface and has a third and fourth portion. The light emitting layer is provided on the first portion. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the second portion. The second conductive pillar is provided on the second semiconductor layer. The translucent layer is provided on the fourth portion. The wavelength conversion layer is provided on the third portion and on the translucent layer.
Public/Granted literature
- US20130256727A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-10-03
Information query
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