Invention Grant
- Patent Title: Semiconductor light emitting device and fabrication method thereof
- Patent Title (中): 半导体发光器件及其制造方法
-
Application No.: US13803943Application Date: 2013-03-14
-
Publication No.: US08946760B2Publication Date: 2015-02-03
- Inventor: Yu Seung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2012-0033978 20120402
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/62 ; H01L33/44 ; H01L33/38

Abstract:
A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.
Public/Granted literature
- US20130256735A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2013-10-03
Information query
IPC分类: