Invention Grant
- Patent Title: Bi-directional silicon controlled rectifier structure
- Patent Title (中): 双向可控硅整流器结构
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Application No.: US13778479Application Date: 2013-02-27
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Publication No.: US08946766B2Publication Date: 2015-02-03
- Inventor: James P. Di Sarro , Robert J. Gauthier, Jr. , Junjun Li
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans, LLP
- Agent Anthony J. Canale
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/74 ; H01L29/66
Abstract:
Bi-directional silicon controlled rectifier device structures and design structures, as well as fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a first conductivity type is formed in a device region, which may be defined from a device layer of a semiconductor-on-insulator substrate. An anode of a first silicon controlled rectifier is formed in the first well. A cathode of a second silicon controlled rectifier is formed in the first well. The anode of the first silicon controlled rectifier has the first conductivity type. The cathode of the second silicon controlled rectifier has a second conductivity type opposite to the first conductivity type.
Public/Granted literature
- US20140239343A1 BI-DIRECTIONAL SILICON CONTROLLED RECTIFIER STRUCTURE Public/Granted day:2014-08-28
Information query
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