Invention Grant
- Patent Title: Lateral devices containing permanent charge
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Application No.: US14168300Application Date: 2014-01-30
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Publication No.: US08946769B2Publication Date: 2015-02-03
- Inventor: Mohamed N. Darwish , Amit Paul
- Applicant: MaxPower Semiconductor, Inc.
- Applicant Address: US CA San Jose
- Assignee: MaxPower Semiconductor Inc.
- Current Assignee: MaxPower Semiconductor Inc.
- Current Assignee Address: US CA San Jose
- Agency: Groover & Associates PLLC
- Agent Gwendolyn S. S. Groover; Robert O. Groover, III
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3105 ; H01L29/78 ; H01L29/40 ; H01L29/06 ; H01L21/263 ; H01L21/28 ; H01L21/3115 ; H01L29/51 ; H01L29/423 ; H01L29/08
Abstract:
A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.
Public/Granted literature
- US20140239390A1 LATERAL DEVICES CONTAINING PERMANENT CHARGE Public/Granted day:2014-08-28
Information query
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