Nitride semiconductor structure

Invention Grant

US08946775B2 Nitride semiconductor structure 有权

Title translation: 氮化物半导体结构

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Patent Title: Nitride semiconductor structure
Patent Title (中): 氮化物半导体结构
Application No.: US13591232

Application Date: 2012-08-22
Publication No.: US08946775B2

Publication Date: 2015-02-03
Inventor: Chen-Zi Liao , Chih-Wei Hu , Yen-Hsiang Fang , Rong Xuan
Applicant: Chen-Zi Liao , Chih-Wei Hu , Yen-Hsiang Fang , Rong Xuan
Applicant Address: TW Hsinchu
Assignee: Industrial Technology Research Institute
Current Assignee: Industrial Technology Research Institute
Current Assignee Address: TW Hsinchu
Agency: Jianq Chyun IP Office
Main IPC: H01L21/02
IPC: H01L21/02

Abstract:

A nitride semiconductor structure is provided. The nitride semiconductor structure at least includes a silicon substrate, a AlN layer, a AlGaN layer and a GaN layer formed on the AlGaN layer. The silicon substrate has a surface tilted at 0

Abstract(Chinese):

提供氮化物半导体结构。氮化物半导体结构至少包括在AlGaN层上形成的硅衬底，AlN层，AlGaN层和GaN层。硅衬底具有相对于垂直于（111）晶面的轴在0 <倾斜并且倾斜0.5°的表面，并且在表面上形成AlN层。 AlN层形成在AlN层上。此外，AlGaN层中的Al含量在从硅衬底侧朝向GaN层侧的层厚度方向上逐渐减小。

Public/Granted literature

US20140054593A1 NITRIDE SEMICONDUCTOR STRUCTURE Public/Granted day:2014-02-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理