Invention Grant
US08946777B2 Nitride-based transistors having laterally grown active region and methods of fabricating same
有权
具有横向增长的有源区的氮化物基晶体管及其制造方法
- Patent Title: Nitride-based transistors having laterally grown active region and methods of fabricating same
- Patent Title (中): 具有横向增长的有源区的氮化物基晶体管及其制造方法
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Application No.: US12564473Application Date: 2009-09-22
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Publication No.: US08946777B2Publication Date: 2015-02-03
- Inventor: Adam William Saxler , Scott Sheppard , Richard Peter Smith
- Applicant: Adam William Saxler , Scott Sheppard , Richard Peter Smith
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L29/778 ; H01L29/66 ; H01L29/20
Abstract:
High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
Public/Granted literature
- US20100012952A1 Nitride-Based Transistors Having Laterally Grown Active Region and Methods of Fabricating Same Public/Granted day:2010-01-21
Information query
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