Invention Grant
- Patent Title: Ionic field effect transistor having heterogeneous triangular nanochannel and method of manufacturing the same
- Patent Title (中): 具有异质三角形纳米通道的离子场效应晶体管及其制造方法
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Application No.: US14181820Application Date: 2014-02-17
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Publication No.: US08946785B2Publication Date: 2015-02-03
- Inventor: Geunbae Lim , Sung Jae Kim , Bumjoo Kim , Joonseong Heo , Hyukjin J. Kwon
- Applicant: Postech Academy-Industry Foundation
- Applicant Address: KR Pohang-Si
- Assignee: Postech Academy-Industry Foundation
- Current Assignee: Postech Academy-Industry Foundation
- Current Assignee Address: KR Pohang-Si
- Agency: Lexyoume IP Meister, PLLC
- Priority: KR10-2013-0019382 20130222
- Main IPC: G01N27/414
- IPC: G01N27/414 ; B82Y15/00

Abstract:
An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer.
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