Invention Grant
- Patent Title: Reduced charge transistor
- Patent Title (中): 减少充电晶体管
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Application No.: US13646688Application Date: 2012-10-06
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Publication No.: US08946787B2Publication Date: 2015-02-03
- Inventor: Ralf Siemieniec , Cedric Ouvrard
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: SpryIP, LLC
- Main IPC: H01L29/80
- IPC: H01L29/80

Abstract:
Representative implementations of devices and techniques provide a reduced charge transistor arrangement. The capacitance and/or charge of a transistor structure may be reduced by minimizing an overlap of a top gate with respect to a drain of the transistor.
Public/Granted literature
- US20140097478A1 REDUCED CHARGE TRANSISTOR Public/Granted day:2014-04-10
Information query
IPC分类: