Invention Grant
- Patent Title: Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device
- Patent Title (中): 半导体装置及其制造方法以及包括半导体装置的电子装置
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Application No.: US13295620Application Date: 2011-11-14
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Publication No.: US08946789B2Publication Date: 2015-02-03
- Inventor: Sun-kook Kim , Woong Choi , Sang-yoon Lee
- Applicant: Sun-kook Kim , Woong Choi , Sang-yoon Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0019650 20110304
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/06 ; H01L29/10 ; B82Y10/00 ; B82Y40/00 ; H01L29/775 ; H01L29/786 ; H01L51/00 ; H01L51/05 ; H01L51/42
Abstract:
An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).
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