Invention Grant
US08946795B2 Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter
有权
背面照明(BSI)图像传感器,减少了闪光和电快门
- Patent Title: Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter
- Patent Title (中): 背面照明(BSI)图像传感器,减少了闪光和电快门
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Application No.: US13050285Application Date: 2011-03-17
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Publication No.: US08946795B2Publication Date: 2015-02-03
- Inventor: Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
- Applicant: Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L27/146

Abstract:
Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
Public/Granted literature
- US20120235212A1 BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH REDUCED BLOOMING AND ELECTRICAL SHUTTER Public/Granted day:2012-09-20
Information query
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