Invention Grant
- Patent Title: Semiconductor device with protective layer and method of manufacturing same
- Patent Title (中): 具有保护层的半导体器件及其制造方法
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Application No.: US13593084Application Date: 2012-08-23
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Publication No.: US08946800B2Publication Date: 2015-02-03
- Inventor: Ippei Kume , Kenichiro Hijioka , Naoya Inoue , Hiroyuki Kunishima , Manabu Iguchi , Hiroki Shirai
- Applicant: Ippei Kume , Kenichiro Hijioka , Naoya Inoue , Hiroyuki Kunishima , Manabu Iguchi , Hiroki Shirai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2011-191983 20110902
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02
Abstract:
To provide a semiconductor device featuring reduced variation in capacitor characteristics. In the semiconductor device, a protective layer is provided at the periphery of the upper end portion of a recess (hole). This protective layer has a dielectric constant higher than that of an insulating layer placed in the same layer as the protective layer and configuring a multilayer wiring layer placed in a logic circuit region.
Public/Granted literature
- US20130056850A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-03-07
Information query
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