Invention Grant
- Patent Title: Semiconductor device with compensation regions
- Patent Title (中): 具有补偿区域的半导体器件
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Application No.: US13862835Application Date: 2013-04-15
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Publication No.: US08946817B2Publication Date: 2015-02-03
- Inventor: Franz Hirler
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak and Homiller, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/36 ; H01L29/78

Abstract:
A semiconductor device includes a semiconductor body including an inner region, and an edge region, a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal, and at least one second doped device region of a second doping type complementary to the first doping type in the inner region and coupled to a second terminal. Further, the semiconductor device includes a minority carrier converter structure in the edge region. The minority carrier converter structure includes a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region.
Public/Granted literature
- US20140306298A1 Semiconductor Device with Compensation Regions Public/Granted day:2014-10-16
Information query
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