Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13864464Application Date: 2013-04-17
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Publication No.: US08946827B2Publication Date: 2015-02-03
- Inventor: Satoshi Maeda , Maya Ueno
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2012-101541 20120426
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L49/02 ; H01L27/08 ; H03K3/011

Abstract:
Disclosed is a semiconductor device. The semiconductor device includes a functional circuit having a resistor formed by a plurality of polysilicon resistors, and in which the property of the functional circuit can be adjusted by trimming the resistor, and in which the polysilicon resistors are coupled in series or in parallel to each other and arranged in a direction perpendicular to one side of the semiconductor device.
Public/Granted literature
- US20130285207A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-10-31
Information query
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