Invention Grant
- Patent Title: Semiconductor device having elevated structure and method of manufacturing the same
- Patent Title (中): 具有升高的结构的半导体器件及其制造方法
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Application No.: US12702683Application Date: 2010-02-09
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Publication No.: US08946828B2Publication Date: 2015-02-03
- Inventor: Sey-Ping Sun , Tsung-Lin Lee , Chin-Hsiang Lin , Chih-Hao Chang , Chen-Nan Yeh , Chao-An Jong
- Applicant: Sey-Ping Sun , Tsung-Lin Lee , Chin-Hsiang Lin , Chih-Hao Chang , Chen-Nan Yeh , Chao-An Jong
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.
Public/Granted literature
- US20110193144A1 SEMICONDUCTOR DEVICE HAVING ELEVATED STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-08-11
Information query
IPC分类:
