Invention Grant
US08946829B2 Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications
有权
使用等离子体掺杂和蚀刻的三维晶体管应用的选择性鳍形成工艺
- Patent Title: Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications
- Patent Title (中): 使用等离子体掺杂和蚀刻的三维晶体管应用的选择性鳍形成工艺
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Application No.: US13273527Application Date: 2011-10-14
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Publication No.: US08946829B2Publication Date: 2015-02-03
- Inventor: Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yi-Tang Lin , Chih-Sheng Chang , Chi-Wen Liu
- Applicant: Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yi-Tang Lin , Chih-Sheng Chang , Chi-Wen Liu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8238 ; H01L21/84 ; H01L29/78 ; H01L27/092 ; H01L27/12 ; H01L29/06 ; H01L29/66
Abstract:
A semiconductor apparatus includes fin field-effect transistor (FinFETs) having shaped fins and regular fins. Shaped fins have top portions that may be smaller, larger, thinner, or shorter than top portions of regular fins. The bottom portions of shaped fins and regular fins are the same. FinFETs may have only one or more shaped fins, one or more regular fins, or a mixture of shaped fins and regular fins. A semiconductor manufacturing process to shape one fin includes forming a photolithographic opening of one fin, optionally doping a portion of the fin, and etching a portion of the fin.
Public/Granted literature
- US20130093026A1 SELECTIVE FIN-SHAPING PROCESS USING PLASMA DOPING AND ETCHING FOR 3-DIMENSIONAL TRANSISTOR APPLICATIONS Public/Granted day:2013-04-18
Information query
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