Invention Grant
- Patent Title: Magnetic memory and method of fabrication
- Patent Title (中): 磁存储器和制造方法
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Application No.: US13872903Application Date: 2013-04-29
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Publication No.: US08946836B2Publication Date: 2015-02-03
- Inventor: Alexander C. Kontos , Steven Sherman , John J. Hautala , Simon Ruffell
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L43/02 ; H01L27/22

Abstract:
In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.
Public/Granted literature
- US20130285177A1 MAGNETIC MEMORY AND METHOD OF FABRICATION Public/Granted day:2013-10-31
Information query
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