Invention Grant
- Patent Title: Thermal improvement of integrated circuit packages
- Patent Title (中): 集成电路封装的热改善
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Application No.: US13670579Application Date: 2012-11-07
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Publication No.: US08946871B2Publication Date: 2015-02-03
- Inventor: Zeki Z. Celik , Allen S. Lim , Atila Mertol
- Applicant: LSI Corporation
- Applicant Address: US CA San Jose
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
An integrated circuit package comprising an active semiconductor device layer and at least one heat-transfer semiconductor layer on the active semiconductor device layer. The heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer.
Public/Granted literature
- US20140124918A1 THERMAL IMPROVEMENT OF INTEGRATED CIRCUIT PACKAGES Public/Granted day:2014-05-08
Information query
IPC分类: