Invention Grant
- Patent Title: Method for producing a semiconductor
- Patent Title (中): 半导体制造方法
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Application No.: US13652772Application Date: 2012-10-16
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Publication No.: US08946872B2Publication Date: 2015-02-03
- Inventor: Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102008025733 20080529
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L21/265 ; H01L21/324 ; H01L21/263
Abstract:
A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
Public/Granted literature
- US20130049176A1 METHOD FOR PRODUCING A SEMICONDUCTOR Public/Granted day:2013-02-28
Information query
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