Invention Grant
US08946874B2 IC in-process solution to reduce thermal neutrons soft error rate
有权
IC在过程中解决方案,以减少热中子的软错误率
- Patent Title: IC in-process solution to reduce thermal neutrons soft error rate
- Patent Title (中): IC在过程中解决方案,以减少热中子的软错误率
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Application No.: US13013424Application Date: 2011-01-25
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Publication No.: US08946874B2Publication Date: 2015-02-03
- Inventor: Yung-Huei Lee , Chou-Jie Tsai , Chia-Fang Wu , Wei-Cheng Chu
- Applicant: Yung-Huei Lee , Chou-Jie Tsai , Chia-Fang Wu , Wei-Cheng Chu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/522 ; H01L23/29 ; H01L23/31

Abstract:
Integrated Circuits and methods for reducing thermal neutron soft error rate (SER) of a digital circuit are provided by doping a protection layer on top of the metal layer and in physical contact with the metal layer of the digital circuit, wherein the protection layer is doped with additional thermal neutron absorbing material. The thermal neutron absorbing material can be selected from the group consisting of Gd, Sm, Cd, B, and combinations thereof. The protection layer may comprise a plurality of sub-layers among which a plurality of them containing additional thermal neutron absorbing material.
Public/Granted literature
- US20120187549A1 IC In-process Solution to Reduce Thermal Neutrons Soft Error Rate Public/Granted day:2012-07-26
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