Invention Grant
- Patent Title: Device and method for manufacturing a device
- Patent Title (中): 用于制造设备的装置和方法
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Application No.: US13773421Application Date: 2013-02-21
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Publication No.: US08946902B2Publication Date: 2015-02-03
- Inventor: Martin Vielemeyer
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/3065

Abstract:
A device includes a semiconductor chip including a frontside, a backside, and a side surface extending from the backside to the frontside. The side surface includes a first region and a second region, wherein a level of the first region is different from a level of the second region. The device further includes an electrically conductive material arranged over the backside of the semiconductor chip and over the first region of the side surface, wherein the second region of the side surface is uncovered by the electrically conductive material.
Public/Granted literature
- US20140232006A1 Device and Method for Manufacturing a Device Public/Granted day:2014-08-21
Information query
IPC分类: