Invention Grant
- Patent Title: Substrate vias for heat removal from semiconductor die
- Patent Title (中): 用于从半导体芯片散热的基板通孔
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Application No.: US12869844Application Date: 2010-08-27
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Publication No.: US08946904B2Publication Date: 2015-02-03
- Inventor: Tarak A. Railkar , Ashish Alawani , Ray Parkhurst
- Applicant: Tarak A. Railkar , Ashish Alawani , Ray Parkhurst
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/053 ; H01L23/14 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H05K7/00 ; H05K7/20 ; H01L23/498 ; H01L23/367

Abstract:
A substrate comprising a plurality of layers, a first side and a second side; and a via extending through the substrate from the first side to the second side. The via comprises:a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area; a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via; a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area; and a second thermal and electrical contact pad disposed under the second dielectric layer, wherein the second contact pad physically contacts the second substrate via.
Public/Granted literature
- US20120049345A1 SUBSTRATE VIAS FOR HEAT REMOVAL FROM SEMICONDUCTOR DIE Public/Granted day:2012-03-01
Information query
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