Invention Grant
- Patent Title: High side switch
- Patent Title (中): 高侧开关
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Application No.: US13191754Application Date: 2011-07-27
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Publication No.: US08946943B2Publication Date: 2015-02-03
- Inventor: Luca Petruzzi , Alberto Zanardi
- Applicant: Luca Petruzzi , Alberto Zanardi
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01H19/64
- IPC: H01H19/64 ; H03K17/18 ; H03K17/082 ; H01L25/16

Abstract:
A semiconductor chip includes at least one power semiconductor switch configured to activate and deactivate current conduction from a first supply terminal, which is connected to a first supply line that provides an unstabilized first supply voltage, to the at least one output terminal in accordance with a respective control signal. In operation, the unstabilized first supply voltage is monitored and an under-voltage is signaled when the unstabilized first supply voltage falls below a first threshold value. The first supply terminal is short circuited with a third terminal when the an under-voltage is signaled.
Public/Granted literature
- US20130027114A1 High Side Switch Public/Granted day:2013-01-31
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