Invention Grant
- Patent Title: Multi-voltage supplied input buffer
- Patent Title (中): 多电压输入缓冲器
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Application No.: US14031296Application Date: 2013-09-19
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Publication No.: US08947131B2Publication Date: 2015-02-03
- Inventor: Seungho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0110119 20121004
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H02M3/155

Abstract:
An input buffer capable of interfacing higher-voltage logic signals to lower voltage internal circuitry includes a first stage configured to generate a first output signal in response to an input signal, the first stage configured to receive a first power supply voltage and including semiconductor circuit components configured to be variably biased responsive to a variable voltage. The input buffer also includes a second stage configured to receive the first output voltage and to responsively generate a second output signal, the second stage biased according to the first power supply voltage. The input buffer further includes a bias circuit configured to generate the variable voltage responsive to a state of the input signal.
Public/Granted literature
- US20140097888A1 MULTI-VOLTAGE SUPPLIED INPUT BUFFER Public/Granted day:2014-04-10
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