Invention Grant
- Patent Title: Decoupling circuit and semiconductor integrated circuit
- Patent Title (中): 去耦电路和半导体集成电路
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Application No.: US13786167Application Date: 2013-03-05
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Publication No.: US08947134B2Publication Date: 2015-02-03
- Inventor: Masatomo Eimitsu , Takanori Saeki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2010-099580 20100423
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K17/16 ; H03K19/003

Abstract:
A decoupling circuit includes an inverter. The inverter includes i (i is an integer of 1 or more) PMOS transistors each having a first gate electrode, and j (j is an integer of 0 or more) PMOS transistors each having a second gate electrode. The inverter includes m (m is an integer of 1 or more) NMOS transistors each having a third gate electrode, and n (n is an integer of 0 or more) NMOS transistors each having a fourth gate electrode. The first to fourth gate electrodes are coupled to an input end of the inverter. A total area of the first and second gate electrodes is different from a total area of the third and fourth gate electrodes.
Public/Granted literature
- US20130181765A1 DECOUPLING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-07-18
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