Invention Grant
- Patent Title: Electronic circuit comprising thin-film transistors
- Patent Title (中): 电子电路包括薄膜晶体管
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Application No.: US13668426Application Date: 2012-11-05
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Publication No.: US08947153B2Publication Date: 2015-02-03
- Inventor: Jun Koyama , Kazunori Watanabe
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-259900 20091113
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/73 ; H01L29/423 ; H01L27/12 ; H01L29/24 ; H01L29/786 ; H01L29/22 ; H01L29/739

Abstract:
An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor.
Public/Granted literature
- US20130056763A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-03-07
Information query
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