Invention Grant
- Patent Title: Photoelectric sensor
- Patent Title (中): 光电传感器
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Application No.: US14030231Application Date: 2013-09-18
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Publication No.: US08947652B2Publication Date: 2015-02-03
- Inventor: Soji Ohmae , Kiyohiko Gondo , Yusuke Iida
- Applicant: Omron Corporation
- Applicant Address: JP Kyoto
- Assignee: Omron Corporation
- Current Assignee: Omron Corporation
- Current Assignee Address: JP Kyoto
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2012-233404 20121023
- Main IPC: G01B11/00
- IPC: G01B11/00 ; G01J1/18 ; G01V8/10

Abstract:
The disclosure provides a photoelectric sensor that provides useful information to set measurement conditions. The photoelectric sensor includes a light emitting unit having a light emitting element configured to emit detection light toward a detection area, a light receiving unit having a light receiving element configured to receive the detection light from the detection area and to obtain a detection value corresponding to the amount of light received, and a display unit configured to display information about the detection value in the light receiving unit. When the detection value varies across a predetermined threshold, the display unit displays a transit time that is the time from when the detection value crosses the predetermined threshold until when it crosses the predetermined threshold again, and a variation amount of the detection value in the variation.
Public/Granted literature
- US20140111814A1 PHOTOELECTRIC SENSOR Public/Granted day:2014-04-24
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